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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)
FEATURES
• Low on-state resistance RDS(on) = 4. 4 Ω MAX. (VGS = 10 V, ID = 1. 0 A)
• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2. 0 A)
• Gate voltage rating ±30 V • Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VD...