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K1808

Hitachi Semiconductor
Part Number K1808
Manufacturer Hitachi Semiconductor
Description 2SK1808
Published Dec 29, 2014
Detailed Description 2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File K1808 PDF File

K1808
K1808

Overview
2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 4 10 4 35 150 –55 to +150 Unit V V A A A W °C °C 2 2S...


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