2SK3310 - Toshiba Semiconductor
Description
2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) • High forward transfer admittance: |Yfs| = 4.
3 S (typ.
) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement model: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAR
IAR EAR Tch Tstg
Rating
450 450 ±30 10 40 40
222
10 4 150 −55~150
Unit V V V
A
W mJ A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.
9 g (typ.
)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
3.
125 62.
5
°C/W °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.
7 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06
2SK3310
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
⎪Yfs⎪ Ciss Crss Coss
VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 450 V, VGS = ...
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