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FQA6N90C_F109

Fairchild Semiconductor
Part Number FQA6N90C_F109
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Dec 17, 2014
Detailed Description FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V...
Datasheet PDF File FQA6N90C_F109 PDF File

FQA6N90C_F109
FQA6N90C_F109

Overview
FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.
3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant September 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D G DS TO-3PN FQA Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous ...


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