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GT50J325

Toshiba Semiconductor
Part Number GT50J325
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fa...
Datasheet PDF File GT50J325 PDF File

GT50J325
GT50J325

Overview
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.
05 μs (typ.
) • Low switching loss: Eon = 1.
30 mJ (typ.
) : Eoff = 1.
34 mJ (typ.
) • Low saturation Voltage: VCE (sat) = 2.
0 V (typ.
) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Emitter-collector forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol Rating Unit VCES 600 V VGES ±20 V IC 50 A ICP 100 IF 50 A IFM 100 PC 240 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA Weight: 9.
75 g ― ― 2-21F2C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
521 2.
30 Unit °C/W °C/W Equivalent Circuit Marking Gate Collector Emitter TOSHIBA GT50J325 JAPAN Part No.
(or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2006-11-01 Electrical Characteristics (Ta = 25°C) GT50J325 Characteristics Symbol Test Condition Min Typ.
Max Unit Gate leakage ...


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