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MMA20312BVT1

Part Number	MMA20312BVT1
Manufacturer	Freescale Semiconductor
Description	Heterojunction Bipolar Transistor
Published	Nov 28, 2014
Detailed Description	Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearit...
Datasheet	MMA20312BVT1 PDF File

Overview

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.
It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V.
The amplifier is housed in a cost--effective, surface mount QFN plastic package.
 Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Te...

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MMA20312BVT1 Heterojunction Bipolar Transistor - Freescale Semiconductor

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