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IRFW730B

Fairchild Semiconductor
Part Number IRFW730B
Manufacturer Fairchild Semiconductor
Description 400V N-Channel MOSFET
Published Nov 24, 2014
Detailed Description IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhan...
Datasheet PDF File IRFW730B PDF File

IRFW730B
IRFW730B

Overview
IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features • 5.
5A, 400V, RDS(on) = 1.
0Ω @VGS = 10 V • Low gate charge ( typical 25 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% aval...


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