silicon NPN epitaxial planar type transistor - eleflow
Description
Description
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
• Emitter ballasted construction for reliability and performance.
• Manufactured incorporating recyclable RoHS compliant materials.
• Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz.
Application
10 to 14 watts output power class AB amplifier applications within HF band.
2SC1969
TO-220 Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo Vebo Veco Ic
Pc
Tj Tstg Rth-a Rth-c
Collector to base voltage Emitter to base voltage Collector to emitter voltage Collector current
Collector dissipation
Junction temperature Storage temperature
Thermal resistance
Rbe =
Ta = 25°C Tc = 25°C
Junction to ambient Junction to case
Note: Above parameters are guaranteed independently
Ratings
60 5 25 6 1.
7 20 150 -55 to 150 73.
5 6.
25
Unit
V V V A W W °C °C °C/W °C/W
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Parameter
V(BR)ebo V(BR)cbo V(BR)ceo Icbo Iebo hfe
Po
ηc
Emitter to base breakdown voltage Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cut-off current Emitter cut-off current
DC forward current gain*
Output power
Collector efficiency
Test Conditions
Ie = 5mA, Ic = 0 Ic = 1mA, Ie = 0 Ic = 10mA, Rbe = Vcb = 4V, Ie = 0 Veb = 4V, Ic = 0 Vce = 12V, Ic = 10mA
Vcc = 12V, Pin = 1000mW, F = 27MHz
Limits Min Typ Max
5 60 25
100 100
10 50 100 13 18
60 70
Unit
V V V µA µA
W %
Note: *Pulse test, Pw = 150µS, duty = 5%
Above parameters, ratings, limits and conditions are subject to change
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Specifications are subject to change witho...
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