Silicon NPN Power Transistor - INCHANGE
Description
isc Silicon NPN RF Power Transistor
INCHANGE Semiconductor
2SC1969
DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature Range
20
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 73.
5 ℃/W
Rth j-c Thermal Resistance,Junction to Case
6.
25 ℃/W
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iscsemi.
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isc Silicon NPN RF Power Transistor
INCHANGE Semiconductor
2SC1969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 12V
MIN TYP.
MAX UNIT
60
V
25
V
5
V
0.
1 mA
0.
1 mA
10
180
hFE Classifications
X
A
B
10-25 20-45 35-70
C
D
55-110 90-180
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applicat...
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