Silicon N-Channel MOS FET - Hitachi Semiconductor
Description
2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
D 321 1.
Source
G 2.
Drain 3.
Gate
S
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch Tch Tstg
Ratings 60 ±20 0.
3 1.
2 0.
3 400 150 –55 to +150
Unit V V A A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS 60
Gate to source breakdown voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 1.
0 —
—
Forward transfer admittance |yfs|
0.
22
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
t d(on) tr t d(off) tf VDF
— — — — —
Body to drain diode reverse recovery time
t rr
—
Note: 1.
Pulse test
Typ —
—
— — — 1.
3
1.
8 0.
35 33 17 5 2 4 18 16 0.
9
45
Max —
—
±10 50 2.
0 1.
7
2.
5 — — — — — — — — —
—
Unit V
V
µA µA V Ω
Ω S pF pF pF ns ns ns ns V
ns
Test conditions ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.
2 A, VGS = 10 V *1
ID = 0.
2 A, VGS = 4 V *1 ID = 0.
2 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
ID = 0.
2 A, VGS = 10 V, RL = 150 Ω
IF = 0.
3 A, VGS = 0
IF = 0.
3 A, VGS = 0, diF/dt = 50 A/µs
2
Channel Dissipation Pch (mW)
Power vs.
Temperature Derating 600
400
200
0 50 100 150 Ambient Temperarure Ta (°C)
Typ...
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