2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D G1
2 3 1. Gate 2. Drain 3. Source
S
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 250 ±30 20 80 20 60 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2008
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
250
Gate to source breakdown voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 2. 0 —
Forward transfer admittance |yfs|
9. 0
Typ —
—
— — — 0. 12
14
Max —
—
±10 250 3. 0 0. 15
—
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
— — — — — — — —
—
2340 1000 160 30 125 190 100 1. 2
— — — — — — — —
120 —
Unit V
V
µA µA V Ω
S
pF pF pF ns ns ns ns V
ns
Test conditions ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0 VDS =200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A VGS = 10 V*1 ID = 10 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0, diF / dt = 100 A / µs
See chracteristic curves of 2SK2007
3
Channel Dissipation Pch (W)
2SK2008
Power vs. Temperature Derating 90
60
30
0 50 100 150 Case Temperature Tc (°C)
Drain Current I...
K2008 PDF File
