Silicon N-Channel MOSFET - Hitachi Semiconductor
Description
2SK2590
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
Preliminary
D 123 1.
Gate
G 2.
Drain (Flange)
3.
Source
S
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25 °C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 200 ±20 7 28 7 50 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2590
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
200
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 2.
0 —
Forward transfer admittance |yfs|
3.
0
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
— — — — — — — —
—
Typ —
—
— — — 0.
33
4.
5
700 260 45 20 45 50 35 1.
1
150
Max Unit —V
—V
±10 µA 250 µA 4.
0 V 0.
45 Ω
—S
— pF — pF — pF — ns — ns — ns — ns —V
— ns
Test Conditions ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.
5Ω
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0, diF / dt = 100 A / µs
See characteristics curves of 2SK1957.
3
Channel Dissipation Pch (mW) Drain Current I D (A)
2SK2590
Maximum Channel Dissipation Curve 80
60
40
20
0 50 100 150 200 C...
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