(MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode - GeneSiC
Description
MBR40020CT thru MBR40040CTR
Silicon Power Schottky Diode
Features
• High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package
VRRM = 20 V - 40 V IF(AV) = 400 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Symbol IF(AV) IFSM VF IR Conditions TC = 125 °C tp = 8.
3 ms, half sine IFM = 200 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 400 3000 0.
70 1 10 50 400 3000 0.
70 1 10 50 400 3000 0.
70 1 10 50 400 3000 0.
70 1 10 50 Unit A A V
mA
Thermal characteristics
Thermal resistance, junction-case, per leg RΘJC 0.
35 0.
35 0.
35 0.
35 °C/W
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MBR40020CT thru MBR40040CTR
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MBR40020CT thru MBR40040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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