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C1106

SavantIC
Part Number C1106
Manufacturer SavantIC
Description Silicon NPN Transistor
Published Nov 7, 2014
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1106 DESCRIPTION ·...
Datasheet PDF File C1106 PDF File

C1106
C1106

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.
DataSheet4U.
com 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 350 250 6 2 80 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.
DataSheet4U.
com CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1106 TYP.
MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.
1A ;IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.
5A; IB=0.
3A 5.
0 V VBEsat Base-emitter saturation voltage IC=1.
5A; IB=0.
3A 1.
5 V ICBO Collector cut-off current VCB=350V; IE=0 0.
1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.
1 mA hFE DC current gain IC=0.
2A ; VCE=5V 30 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.
DataSheet4U.
com PACKAGE OUTLINE 2SC1106 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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