SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0. 2 9. 9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES
VDSS= 600V, ID= 2. 0A Drain-Source ON Resistance : RDS(ON)=5. 0 @VGS = 10V Qg(typ. ) = 10. 9nC
K M L J D N N
P
F G H I J
15. 95 MAX 1. 3+0. 1/-0. 05 _ 0. 1 0. 8 + _ 0. 2 3. 6 + _ 0. 1 2. 8 + 3. 7 0. 5+0. 1/-0. 05 1. 5 _ 0. 3 13. 08 + 1. 46 _ 0. 1 1. 4 + _ 0. 1 1. 27 + _ 0. 2 2. 54 + _ 0. 2 4. 5 + _ 0. 2 2. 4 + _ 0. 2 9. 2 +
H
K L M N O P Q
1
2
3
MAXIMUM RATING (Tc=25
)
RATING
1. GATE 2. DRAIN 3. SOURCE
TO-220AB
CHARACTERISTIC
SYMBOL
KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 30 2. 0 2. 0* 1. 2* 8. 0* 120 5. 4 5. 5 54 23 0. 18 150 -55 150 mJ mJ V/ns
Q
KHB2D0N60F
A F C
Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
VDSS VGSS ID 1. 2 IDP EAS EAR dv/dt PD 0. 43 Tj Tstg 8. 0
V V
O
B
E G
DIM
MILLIMETERS
A
K
L
M J
R
D N N
H
W W/
1
2
3
A B C D E F G H J K L M N O Q R
_ 0. 2 10. 16 + _ 0. 2 15. 87 + _ 0. 2 2. 54 + _ 0. 1 0. 8 + _ 0. 1 3. 18 + _ 0. 1 3. 3 + _ 0. 2 12. 57 + _ 0. 1 0. 5 + 13. 0 MAX _ 0. 1 3. 23 + 1. 47 MAX 1. 47 MAX _ 0. 2 2. 54 + _ 0. 2 6. 68 + _ 0. 2 4. 7 + _ 0. 2 2. 76 +
1. GATE 2. DRAIN 3. SOURCE
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
TO-220IS (1)
KHB2D0N60F2
A C F
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient
RthJC RthCS RthJA
2. 32 0. 5 62. 5
5. 5 62. 5
/W
S
/W /W
P
E G B
DIM
MILLIMETERS
* : Drain current limited by maximum junction temperature.
K
L
L
R
D
D
D
N N H
J
PIN CONNECTION
M
G
1
...
KHB2D0N60F2 PDF File
