IRG4BC40U - International Rectifier
Description
PD - 91456E
IRG4BC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
---------------------
Typ.
-----0.
50 -----2 (0.
07)
Max.
0.
77 -----80 ------
Units
°C/W g (oz)
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irf.
com
1
4/17/2000
IRG4BC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
600 18 ------------VGE(th) Gate Threshold Voltage 3.
0 ∆VGE(th)/∆TJ Temperature Coeff.
of Threshold Voltage ---gfe Forward Transconductance U 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T ∆V(BR)CES/∆TJ Temperatur...
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