DatasheetsPDF.com

SVD8N80F

Silan Microelectronics
Part Number SVD8N80F
Manufacturer Silan Microelectronics
Description 800V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD8N80T/F_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N80T/F is an N-channel enhancement mode power MOS...
Datasheet PDF File SVD8N80F PDF File

SVD8N80F
SVD8N80F

Overview
SVD8N80T/F_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 8A,800V,RDS(on)（typ）=1.
3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.
SVD8N80T SVD8N80F Package TO-220-3L TO-220F-3L Marking SVD8N80T SVD8N80F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
20 Page 1 of 8 SVD8N80T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 180 1.
44 402 -55～+150 -55～+150 Rating SVD8N80T 800 ±30 8.
0 35 59 0.
48 SVD8N80F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD8N80T 0.
7 62.
5 SVD8N80F 2.
0 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Dra...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)