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BTA80-800B

HAOHAI
Part Number BTA80-800B
Manufacturer HAOHAI
Description TRIACs
Published Oct 19, 2014
Detailed Description 80A TRIACs : 80A 【】 SGS, RoHS VDRM / VRRM (V) 600 V 800 V 1000 V 1200 V 1400 V 1600 V ■QUICK REFERENCE【】 Part N...
Datasheet PDF File BTA80-800B PDF File

BTA80-800B
BTA80-800B


Overview
80A TRIACs : 80A 【】 SGS, RoHS VDRM / VRRM (V) 600 V 800 V 1000 V 1200 V 1400 V 1600 V ■QUICK REFERENCE【】 Part Number BTA80-600B BTA80-800B BTA80-1000B BTA80-1200B BTA80-1400B BTA80-1600B Industry Part № BTA80-600 BTA80-800 BTA80-1000 BTA80-1200 BTA80-1400 BTA80-1600 IT(RMS) (A) IGT (µA / mA) Package Packing Marking 80 A IGT 1~3 ≤50 mA TOP4 1 2 3 4 ：NPNPN；，； ；。：()； ；；、；。 ■PINNING: TOP4 ( TO-4PT or TO-228 ) 【TOP4】【BTA:T2Tab】 Pin 1 2 3 4 5 SYMBOL IT(RMS) ITSM IGM I2t VDRM / VRRM PG(AV) Tj Tstg Symbol T1 G T2 Tab Description Main terminal 1 Gate Main terminal 2 ---- Description - Practicality in Pin Arrange Pin Polarity Circuit diagram 1=T1 2= 3= G 4=T2 5=Tab 5 Tab 4 3 2 1 ■ABSOLUTE RATINGs (Limiting Values)【】 Paramenter & Test Conditions : On-State RMS Current ( full sine wave,TC=80°C) : Non repetitive surge peak on-state current (Tj=25°C, F=50Hz, T=200mS ) : (tp=20mS, Tj=25°C) : Circuit Fusing Consideration (tp=10mS) /: (Tj=25°C) () : Average gate power (Tj=125°C) : Operating Junction Temperature Range @ Rate VRRM and VDRM : Storage Temperature Range Value 80 800 8 3600 600~1600 1 -40 ~ +125 -40 ~ +150 Unit A A2ses V W ℃ ■ELECTRICAL CHARACTERISTICs (Tj=25℃ Unless Otherwise Noted)【】 SYMBOL IGTⅠ(T2+G+) IGT Ⅱ(T2+G-) IGT Ⅲ (T2-G-) IGT Ⅳ(T2-G+) IH IL IDRM IRRM VGT VTM VTO VGD RD dv / dt （dv/dt）C di / dt Rth(j-c) Rth(j-a) Paramenter & Test Conditions :Ⅰ :Ⅱ :Ⅲ :Ⅳ : Holding Current (IT=500mA) : Latching Current (IG=1.
2 IGT) (Tj=25°C) (Tj=125°C) : Gate trigger voltage (VD=12VDC, RL=30Ω, Tj=25°C) :Peak Forward On-State Voltage (ITM=82A, tp=380µs) : (ITM=82A, tp=380µs) : Gate NO trigger voltage (VD=12VDC, RL=300Ω, Tj=125°C) : Dynamic resistance slops Resistance (Tj=125°C) : (VD=2/3 VDRM，Tj=125°C) : (VD=2/3 VDRM，Tj=125°C) : Critical Rate of Rise of On−State Current -: Thermal Resistance−Junction−to−Case -: Thermal Resistance−Junction−to−Ambient Gate trigger current VD=12VDC, RL=100Ω, Tj=25°C Value Unit → → ...


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