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SVD1N60D

Silan Microelectronics
Part Number SVD1N60D
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode p...
Datasheet PDF File SVD1N60D PDF File

SVD1N60D
SVD1N60D


Overview
SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.
）=8.
6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L Marking SVD1N60M SVD1N60M SVD1N60T 1N60B 1N60B SVD1N60D SVD1N60D Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Bulk AMMO Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
4 2011.
06.
28 Page 1 of 10 SVD1N60M/T/B/D_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 28 0.
22 Rating SVD1N60M/D SVD1N60T 600 ±30 1.
0 4.
0 41 0.
33 47 -55～+150 -55～+150 9 0.
072 SVD1N60B Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD1N60M/D 4.
55 110 SVD1N60T 3.
03 62.
5 SVD1N60B 13.
9 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leaka...


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