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SVD13N50T

Silan Microelectronics
Part Number SVD13N50T
Manufacturer Silan Microelectronics
Description 500V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVD13N50T/F_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power ...
Datasheet PDF File SVD13N50T PDF File

SVD13N50T
SVD13N50T


Overview
SVD13N50T/F_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 13A,500V,RDS(on)(typ)=0.
36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVD13N50T SVD13N50F Package TO-220-3L TO-220F-3L Marking SVD13N50T SVD13N50F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C) Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 180 1446 150 -55～+150 Rating SVD13N50T 500 ±30 13 51 SVD13N50F Unit V V A W mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
21 Page 1 of 8 SVD13N50T/F_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD13N50T 1.
25 62.
5 SVD13N50F 5 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(...


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