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SVD740F

Silan Microelectronics
Part Number SVD740F
Manufacturer Silan Microelectronics
Description 400V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVD740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD740T/F is an N-channel enhancement mode power MOS ...
Datasheet PDF File SVD740F PDF File

SVD740F
SVD740F


Overview
SVD740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S- structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 10A,400V,RDS(on)（typ）=0.
45 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVD740T SVD740F Package TO-220-3L TO-220F-3L Marking SVD740T SVD740F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 160 1.
28 384 -55～+150 -55～+150 Rating SVD740T 400 ±30 10 52 0.
42 SVD740F Unit V V A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
29 Page 1 of 7 SVD740T/F_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD740T 0.
64 62.
5 SVD740F 0.
93 62.
5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on...


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