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2SK3587-01MR

Fuji Electric
Part Number 2SK3587-01MR
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Oct 19, 2014
Detailed Description 2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary b...
Datasheet PDF File 2SK3587-01MR PDF File

2SK3587-01MR
2SK3587-01MR


Overview
2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 mJ Maximum Avalanche Energy 319.
2 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max.
power dissipation 2.
16 W Gate(G) 95 Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Isolation Voltage VISO *6 2 kVrms *1 L=71.
9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < =100V *5 VGS=-30V *6 t=60sec, f=60Hz Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=100V VGS=0V Tch=125°C VDS=80V VGS=0V VGS=±30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V RGS=10 Ω V CC =50V ID=50A VGS=10V L=71.
9µH Tch=25°C ...


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