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SVF13N50F

SL
Part Number SVF13N50F
Manufacturer SL
Description 500V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mod...
Datasheet PDF File SVF13N50F PDF File

SVF13N50F
SVF13N50F


Overview
SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
This device is widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES  13A, 500V, RDS(on)(typ.
)= 0.
44@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
SVF13N50F SVF13N50T SVF13N50PN Package TO-220F-3L TO-220-3L TO-3P Marking SVF13N50F SVF13N50T 13N50 Hazardous Substance Control Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:2.
0 Page 1 of 9 SVF13N50T/F/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Rating Storage Temperature Rating VDS VGS ID IDM PD EAS TJ Tstg SVF13N50T 190 1.
52 Ratings SVF13N50F 500 ±30 13 8.
2 52 51 0.
41 663 -55～+150 -55～+150 SVF13N50PN 218 1.
74 Unit V V A A W W/C mJ C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF13N50T 0.
66 62.
5 Ratings SVF13N50F 2.
45 62.
5 SVF13N50PN 0.
57 50 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) Characteristics Drain –Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacit...


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