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AO4620

Alpha & Omega Semiconductors
Part Number AO4620
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual P + N-Channel MOSFET
Published Oct 19, 2014
Detailed Description AO4620 30V Dual P + N-Channel MOSFET General Description The AO4620 uses advanced trench technology MOSFETs to provide ...
Datasheet PDF File AO4620 PDF File

AO4620
AO4620


Overview
AO4620 30V Dual P + N-Channel MOSFET General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in inverter and other applications.
Features n-channel VDS (V) = 30V ID = 7.
2A (VGS=10V) RDS(ON) < 24mW (VGS=10V) < 36mW (VGS=4.
5V) p-channel -30V -5.
3A (VGS = -10V) RDS(ON) < 32mW (VGS = -10V) < 55mW (VGS = -4.
5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.
2 Current F TA=70°C ID 6.
2 Pulsed Drain Current B IDM 64 TA=25°C Power Dissipation F TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.
3mH B EAR 2 1.
44 9 12 Junction and Storage Temperature Range TJ, TSTG -55 to 150 D2 D1 G2 S2 n-channel G1 S1 p-channel Max p-channel -30 ±20 -5.
3 -4.
5 -40 2 1.
44 17 43 -55 to 150 Units V V A W A mJ °C Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA n-ch n-ch 50 80 Maximum Junction-to-Lead C Steady-State RqJL n-ch 32 Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA p-ch p-ch 50 80 Maximum Junction-to-Lead C Steady-State RqJL p-ch 32 Max Units 62.
5 °C/W 100 °C/W 40 °C/W 62.
5 °C/W 100 °C/W 40 °C/W Rev 8.
1: March 2024 www.
aosmd.
com Page 1 of 7 AO4620 N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Volt...


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