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JANSR2N7423

IRF
Part Number JANSR2N7423
Manufacturer IRF
Description RADIATION HARDENED POWER MOSFET
Published Oct 19, 2014
Detailed Description PD-91299E RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation...
Datasheet PDF File JANSR2N7423 PDF File

JANSR2N7423
JANSR2N7423



Overview
PD-91299E RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.
315Ω 0.
315Ω IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number -14A JANSR2N7423 -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET ® technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-254AA Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight -14 -9.
0 -56 150 1.
2 ±20 500 -14 15 -41 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 9.
3 (Typical ) g For footnotes refer to the last page www.
irf.
com 1 05/13/14 IRHM9250, JANSR2N7423 Pre-Irradiation Electrical Characteristics @ Tj = 25...



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