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SP2106

SamHop Microelectronics
Part Number SP2106
Manufacturer SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product SP2106 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor...
Datasheet PDF File SP2106 PDF File

SP2106
SP2106

Overview
Green Product SP2106 Ver 1.
1 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1A R DS(ON) ( Ω) Max 2.
0 @ VGS=10V 2.
4 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit 100 ±20 1 0.
8 4.
1 0.
25 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.
5 1.
6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change without notice.
Jul,18,2013 1 www.
samhop.
com.
tw SP2106 Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T ...


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