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AUIRFN8458

Part Number	AUIRFN8458
Manufacturer	International Rectifier
Description	Dual N-Channel MOSFET
Published	Oct 15, 2014
Detailed Description	AUTOMOTIVE GRADE AUIRFN8458 VDSS RDS(on) typ. max ID (@TC (Bottom) = 25°C Features  Advanced Process Technolog...
Datasheet	AUIRFN8458 PDF File

Overview

AUTOMOTIVE GRADE AUIRFN8458 VDSS RDS(on) typ.
max ID (@TC (Bottom) = 25°C Features  Advanced Process Technology  Dual N-Channel MOSFET  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating.
These features combine to make this produuct an extreme...

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