DatasheetsPDF.com

R1RW0404DGE-2PR

Part Number	R1RW0404DGE-2PR
Manufacturer	Renesas
Description	4M High Speed SRAM
Published	Oct 10, 2014
Detailed Description	R1RW0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D ...
Datasheet	R1RW0404DGE-2PR PDF File

Overview

R1RW0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0115-0100Z Rev.
1.
00 Mar.
12.
2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.
It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.
The R1RW0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting.
Features • Single supply: 3.
3 V ± 0.
3 V • Access time: 12 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times...

Similar Datasheet

R1RW0404DGE-2LR 4M High Speed SRAM - Renesas
R1RW0404DGE-2PR 4M High Speed SRAM - Renesas

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)