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CS20N60AND

TGW
Part Number CS20N60AND
Manufacturer TGW
Description Silicon N-Channel Power MOSFET
Published Oct 7, 2014
Detailed Description Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained ...
Datasheet PDF File CS20N60AND PDF File

CS20N60AND
CS20N60AND

Overview
Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-3P(N), which accords with the RoHS standard.
R ○ N-Channel Power MOSFET CS20N60AND VDSS ID PD(TC=25℃ ) RDS(ON)Typ 600 20 280 0.
23 V A W Ω Features： z Fast Switching z Low ON Resistance(Rdson≤0.
32Ω) z Low Gate Charge (Typical Data:95nC) z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Puls...


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