IRG4BC40F - International Rectifier
Description
PD - 91454B
IRG4BC40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
50V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 49 27 200 200 ± 20 15 160 65 -55 to + 150 300 (0.
063 in.
(1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.
50 ––– 2.
0 (0.
07)
Max.
0.
77 ––– 80 –––
Units
°C/W g (oz)
www.
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com
1
4/17/2000
IRG4BC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 0.
70 — 1.
50 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.
85 — 1.
56 VGE(th) Gate Threshold Voltage 3.
0 — ∆VGE(th)/∆TJ Temperature Coeff.
of Threshold Voltage — -12 gfe Forward Transconductance U 9.
2 12 — — ICES Zero Gate ...
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