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G4BC40F

International Rectifier

IRG4BC40F - International Rectifier


G4BC40F
G4BC40F

PDF File G4BC40F PDF File



Description
PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
50V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 49 27 200 200 ± 20 15 160 65 -55 to + 150 300 (0.
063 in.
(1.
6mm from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
50 ––– 2.
0 (0.
07) Max.
0.
77 ––– 80 ––– Units °C/W g (oz) www.
irf.
com 1 4/17/2000 IRG4BC40F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 0.
70 — 1.
50 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.
85 — 1.
56 VGE(th) Gate Threshold Voltage 3.
0 — ∆VGE(th)/∆TJ Temperature Coeff.
of Threshold Voltage — -12 gfe Forward Transconductance U 9.
2 12 — — ICES Zero Gate ...



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