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PNM723T703E0-2

Part Number	PNM723T703E0-2
Manufacturer	Prisemi
Description	N-Channel MOSFET
Published	Oct 1, 2014
Detailed Description	PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhance...
Datasheet	PNM723T703E0-2 PDF File

Overview

PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3） MOSFET Product Summary VDS(V) 40 rDS(on)(Ω) 3.
5@ VGS=10V VGS(th)(V) 1 to 2.
0 ID(A) 0.
18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min.
Typ.
Max.
Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.
05A V...

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PNM723T703E0-2 N-Channel MOSFET - Prisemi

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