N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics
Description
Advanced Power Electronics Corp.
AP1003BST-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.
7mm )
D
BV DSS RDS(ON)
G S
30V 4.
5mΩ 17.
3A
ID
Description
The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
GreenFETTM
D
G
S S D
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
3
3
ST
Rating 30 ±20 17.
3 14.
3 75 150 2.
2 1.
4 42
5
Units V V A A A A W W W mJ A °C °C
Continuous Drain Current Pulsed Drain Current
1 3 3 4
Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current
4
Single Pulse Avalanche Energy Storage Temperature Range
28.
8 24 -40 to 150 -40 to 150
Operating Junction Temperature Range
Thermal Data
Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient
3
3 58
°C/W °C/W
Ordering Information
AP1003BST-3TR RoHS-compliant halogen-free GreenFET
TM
ST package, shipped on tape and reel (4800 pcs/reel)
©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com
20090923-3 PRELIMINARY 1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
AP1003BST-3
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=13A VGS=4.
5V, ID=11A
Min.
30 1.
35 13 -
Typ.
3.
6 5.
2 23 12 3 6 10 41 22 7.
6 1155 400 170 1.
1
Max.
Units 4.
5 6.
5 2.
35 1 150 ±100...
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