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AP2305AGN-HF-3

Advanced Power Electronics
Part Number AP2305AGN-HF-3
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP2305AGN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Small...
Datasheet PDF File AP2305AGN-HF-3 PDF File

AP2305AGN-HF-3
AP2305AGN-HF-3


Overview
Advanced Power Electronics Corp.
AP2305AGN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device RoHS-compliant, halogen-free D BV DSS G S -30V 80mΩ -3.
2A R DS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2305AGN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in low current applications such as load switches and DC-DC converters.
D SOT-23 S G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 12 -3.
2 -2.
6 -10 1.
38 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2305AGN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200805212-3 1/5 Advanced Power Electronics Corp.
AP2305AGN-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-30 -0.
5 - Typ.
-0.
1 Max.
Units 60 80 150 -1.
2 -1 -25 ±100 18 1325 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-3.
2A VGS=-4.
5V, ID=-3.
0A VGS=-2.
5V, ID=-2.
0A 9 10 1.
8 3.
6 7 15 21 15 735 100 80 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(o...


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