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AP2305AGN-HF

Advanced Power Electronics
Part Number AP2305AGN-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP2305AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼...
Datasheet PDF File AP2305AGN-HF PDF File

AP2305AGN-HF
AP2305AGN-HF


Overview
AP2305AGN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant S SOT-23 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80mΩ - 3.
2A Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness.
The SOT-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating - 30 ± 12 -3.
2 -2.
6 -10 1.
38 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200805212 AP2305AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-30 -0.
5 - Typ.
-0.
1 Max.
Units 60 80 150 -1.
2 -1 -25 ±100 18 1325 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-3.
2A VGS=-4.
5V, ID=-3.
0A VGS=-2.
5V, ID=-2.
0A 9 10 1.
8 3.
6 7 15 21 15 735 100 80 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-5V, ID=-3.
0A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 12V ID=-3.
2A VDS=-24V VGS=-4.
5V VDS=-15V ID=-3...


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