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AP95T07GS

Advanced Power Electronics
Part Number AP95T07GS
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 24, 2014
Detailed Description AP95T07GS RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fa...
Datasheet PDF File AP95T07GS PDF File

AP95T07GS
AP95T07GS

Overview
AP95T07GS RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 75V 5mΩ 80A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 75 +20 80 70 320 300 2 4 Units V V A A A W W/℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 5 Value 0.
5 40 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200901122 AP95T07GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA 2 Min.
75 2 - Typ.
88 85 25 36 22 160 38 165 985 390 1.
2 Max.
Units 5 4 10 250 +100 135 1.
8 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=75V, VGS=0V VGS= +20V, VDS=0V ID=80A VDS=40V VGS=10V VDS=40V ID=80A RG=3.
3Ω,VGS=10V RD=0.
5Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Drain-Source Leakage Current...


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