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AP20T03GJ-3

Advanced Power Electronics
Part Number AP20T03GJ-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 22, 2014
Detailed Description Advanced Power Electronics Corp. AP20T03GH/J-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast S...
Datasheet PDF File AP20T03GJ-3 PDF File

AP20T03GJ-3
AP20T03GJ-3


Overview
Advanced Power Electronics Corp.
AP20T03GH/J-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant G S D BV DSS R DS(ON) ID 30V 50mΩ 12.
5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H) The AP20T03GH-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
The through-hole TO-251 version (AP20T03GJ-3) is available where a small PCB footprint is required.
G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 12.
5 8 40 12.
5 0.
1 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 10 62.
5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP20T03GH-3TR AP20T03GJ-3TB RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant TO-251 shipped in tubes ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200902104-3 1/6 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BVDSS/∆ Tj AP20T03GH/J-3 Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
30 1 - Typ.
0.
02 Max.
Units - V V/°C Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.
5V, ID=5A 6 4 1.
5 2.
3 6 30 10 3 270...


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