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TPCC8006-H

Toshiba Semiconductor
Part Number TPCC8006-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Sep 20, 2014
Detailed Description TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Conve...
Datasheet PDF File TPCC8006-H PDF File

TPCC8006-H
TPCC8006-H

Overview
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.
4 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 6.
5 mΩ (typ.
) ( VGS = 4.
5 V) High forward transfer admittance: |Yfs| = 67 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain...


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