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TK40A10J1

Toshiba Semiconductor
Part Number TK40A10J1
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Sep 20, 2014
Detailed Description TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regu...
Datasheet PDF File TK40A10J1 PDF File

TK40A10J1
TK40A10J1

Overview
TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 76nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 11.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 40 160 40 202 40 2.
4 150 −55 to 150 Unit V V ...


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