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TJ70A06J3

Toshiba Semiconductor
Part Number TJ70A06J3
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 20, 2014
Detailed Description TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1. Applications • • • Relay Drivers DC-DC Converters Motor D...
Datasheet PDF File TJ70A06J3 PDF File

TJ70A06J3
TJ70A06J3

Overview
TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1.
Applications • • • Relay Drivers DC-DC Converters Motor Drivers 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.
6 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temper...


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