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TK10J80E

Toshiba Semiconductor
Part Number TK10J80E
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK10J80E PDF File

TK10J80E
TK10J80E

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.
4.
0 TK10J80E 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ener...


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