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SSM3K336R

Toshiba Semiconductor
Part Number SSM3K336R
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4...
Datasheet PDF File SSM3K336R PDF File

SSM3K336R
SSM3K336R

Overview
MOSFETs Silicon N-Channel MOS SSM3K336R 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) 4.
5 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.
5 V) 3.
Packaging and Internal Circuit SOT-23F SSM3K336R 1.
Gate 2.
Source 3.
Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-16 Rev.
3.
0 SSM3K336R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 3 A Drain current...


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