DatasheetsPDF.com

SSM3K329R

Toshiba Semiconductor
Part Number SSM3K329R
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K329R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (...
Datasheet PDF File SSM3K329R PDF File

SSM3K329R
SSM3K329R

Overview
MOSFETs Silicon N-Channel MOS SSM3K329R 1.
Applications • Power Management Switches • High-Speed Switching 2.
Features (1) 1.
8-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.
0 V) 3.
Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-02 2021-10-22 Rev.
1.
0 SSM3K329R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 V Drain...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)