Power MOSFET - International Rectifier
Description
PD - 95476B
IRF5806PbF
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.
5V 147mΩ@VGS = -2.
5V
ID
-4.
0A -3.
0A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
D D
1 6 2
A D
5
D
G
3
4
S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -4.
0 -3.
3 -16.
5 2.
0 1.
3 0.
02 ± 20 -55 to + 150
Units
V A W W W/°C V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
62.
5
Units
°C/W
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1
04/20/10
IRF5806PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time...
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