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TK8A60W

Toshiba Semiconductor
Part Number TK8A60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 15, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK8A60W PDF File

TK8A60W
TK8A60W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK8A60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
42 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
4 mA) 3.
Packaging and Internal Circuit TK8A60W 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.
0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 8.
0 32 30 105 2.
0 8.
0 32 150 -55 to 150 2000 0.
6 V A W mJ A  V ...


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