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SSM6J410TU

Toshiba Semiconductor
Part Number SSM6J410TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 12, 2014
Detailed Description SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ) SSM6J410TU ○ Power Management Switch App...
Datasheet PDF File SSM6J410TU PDF File

SSM6J410TU
SSM6J410TU

Overview
SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ) SSM6J410TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 4-V drive • Low ON-resistance RDS(ON) = 393mΩ (max) (@VGS = –4 V) RDS(ON) = 216mΩ (max) (@VGS = –10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID (Note1) -2.
1 A Pulse IDP(Note1) -4.
2 Power dissipation PD(Note2) 500 mW t = 10s 1000 1,2,5,6 : Drain 3 : Gate 4 : Source Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using con...


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