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TK25A10K3

Toshiba Semiconductor
Part Number TK25A10K3
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Sep 11, 2014
Detailed Description TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Application...
Datasheet PDF File TK25A10K3 PDF File

TK25A10K3
TK25A10K3

Overview
TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.
) High forward transfer admittance: |Yfs| = 50 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 25 50 25 39 25 1.
72 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc =...


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