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TJ20A10M3

Part Number	TJ20A10M3
Manufacturer	Toshiba Semiconductor
Description	Field Effect Transistor
Published	Sep 11, 2014
Detailed Description	TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Application...
Datasheet	TJ20A10M3 PDF File

Overview

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 50 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −100 V) • Enhancement-model: Vth = −2.
0 to −4.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −100 V Drain-gate voltage (RGS = 20 kΩ) VDGR −100 V Gate-source voltage VGSS ±20 V Drain current DC (Note 1) Pulse (Note 1) ID IDP −20 A −40 Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) Avalanche current EAS IAR 124 mJ −20 A 1: Gate 2: Drain 3: Source Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range EAR Tch Tstg 2.
29 150 −55 to 150 mJ °C °C Note: Using continuously under heavy loads ...

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TJ20A10M3 Field Effect Transistor - Toshiba Semiconductor

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