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TK40A10K3

Toshiba Semiconductor
Part Number TK40A10K3
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Sep 11, 2014
Detailed Description TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application...
Datasheet PDF File TK40A10K3 PDF File

TK40A10K3
TK40A10K3

Overview
TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application • • • • Low drain-source ON resistance: RDS (ON) = 11.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 ±20 40 160 40 137 40 3.
3 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse ava...


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