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TK8A10K3

Toshiba Semiconductor
Part Number TK8A10K3
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Sep 11, 2014
Detailed Description TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications •...
Datasheet PDF File TK8A10K3 PDF File

TK8A10K3
TK8A10K3

Overview
TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR Tch Tstg Rating 100 100 ±20 8 16 18 4 8 150 −55 to 150 Unit V V V A W mJ A °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Channel ...


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