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TK150F04K3L

Toshiba Semiconductor
Part Number TK150F04K3L
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TK150F04K3L MOSFETs Silicon N-channel MOS (U-MOS) TK150F04K3L 1. Applications • • • Switching Voltage Regulators DC-DC...
Datasheet PDF File TK150F04K3L PDF File

TK150F04K3L
TK150F04K3L

Overview
TK150F04K3L MOSFETs Silicon N-channel MOS (U-MOS) TK150F04K3L 1.
Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.
7 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 40 ±20 150 450 300 238 150 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2011-09-26 Rev.
1.
0 TK150F04K3L 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 0.
5 Unit /W Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 11 µH, RG = 25 Ω, IAR = 150 A Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-09-26 Rev.
1.
...


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